IXTN90P20P

new-10%

Manufacturer part number:IXTN90P20P

Manufacturer:IXYS

Description:MOSFET P-CH 200V 90A SOT227

Case Package:SOT-23

Datasheet:IXTN90P20P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Series	PolarP™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PUFM-X4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	890W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	44m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	12000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	90A Tc
Gate Charge (Qg) (Max) @ Vgs	205nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	90A
Drain-source On Resistance-Max	0.044Ohm
Pulsed Drain Current-Max (IDM)	270A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	3500 mJ
RoHS Status	ROHS3 Compliant