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2N6519TA

2N6519TA

2N6519TA

Rochester Electronics, LLC

2N6519TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N6519TA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 50mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 40MHz
Frequency - Transition 200MHz
Turn Off Time-Max (toff) 3.5ns
Turn On Time-Max (ton) 200ns
RoHS Status ROHS3 Compliant
2N6519TA Product Details

2N6519TA Overview


This device has a DC current gain of 40 @ 50mA 10V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 5mA, 50mA.In this part, there is a transition frequency of 40MHz.Collector Emitter Breakdown occurs at 300VV - Maximum voltage.

2N6519TA Features


the DC current gain for this device is 40 @ 50mA 10V
the vce saturation(Max) is 1V @ 5mA, 50mA
a transition frequency of 40MHz

2N6519TA Applications


There are a lot of Rochester Electronics, LLC 2N6519TA applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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