2N6519TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2N6519TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 50mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
40MHz
Frequency - Transition
200MHz
Turn Off Time-Max (toff)
3.5ns
Turn On Time-Max (ton)
200ns
RoHS Status
ROHS3 Compliant
2N6519TA Product Details
2N6519TA Overview
This device has a DC current gain of 40 @ 50mA 10V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 5mA, 50mA.In this part, there is a transition frequency of 40MHz.Collector Emitter Breakdown occurs at 300VV - Maximum voltage.
2N6519TA Features
the DC current gain for this device is 40 @ 50mA 10V the vce saturation(Max) is 1V @ 5mA, 50mA a transition frequency of 40MHz
2N6519TA Applications
There are a lot of Rochester Electronics, LLC 2N6519TA applications of single BJT transistors.