ZTX788BSTOB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX788BSTOB Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
-15V
Max Power Dissipation
1W
Current Rating
-3A
Base Part Number
ZTX788B
Pin Count
3
Power - Max
1W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
450mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
500 @ 10mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
450mV @ 10mA, 2A
Collector Emitter Breakdown Voltage
15V
Frequency - Transition
100MHz
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
ZTX788BSTOB Product Details
ZTX788BSTOB Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 10mA 2V.When VCE saturation is 450mV @ 10mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.In extreme cases, the collector current can be as low as 3A volts.
ZTX788BSTOB Features
the DC current gain for this device is 500 @ 10mA 2V the vce saturation(Max) is 450mV @ 10mA, 2A the current rating of this device is -3A
ZTX788BSTOB Applications
There are a lot of Diodes Incorporated ZTX788BSTOB applications of single BJT transistors.