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ST631K

ST631K

ST631K

STMicroelectronics

ST631K datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

ST631K Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation12.5W
Base Part Number ST631
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power - Max 12.5W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage120V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:1280 items

Pricing & Ordering

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ST631K Product Details

ST631K Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 100mA 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 5V can achieve high levels of efficiency.In extreme cases, the collector current can be as low as 1A volts.

ST631K Features


the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

ST631K Applications


There are a lot of STMicroelectronics ST631K applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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