KSD363OTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 1A 5V.When VCE saturation is 1V @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Detection of Collector Emitter Breakdown at 120V maximal voltage is present.
KSD363OTU Features
the DC current gain for this device is 70 @ 1A 5V
the vce saturation(Max) is 1V @ 100mA, 1A
KSD363OTU Applications
There are a lot of ON Semiconductor KSD363OTU applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
