MPSW51ARLRA Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 100mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -700mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.50MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

MPSW51ARLRA Features

the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 50MHz

MPSW51ARLRA Applications

There are a lot of ON Semiconductor MPSW51ARLRA applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter