STBV42-AP Overview

In this device, the DC current gain is 10 @ 400mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.A VCE saturation (Max) of 1.5V @ 250mA, 750mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Single BJT transistor can take a breakdown input voltage of 400V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

STBV42-AP Features

the DC current gain for this device is 10 @ 400mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1.5V @ 250mA, 750mA
the emitter base voltage is kept at 9V

STBV42-AP Applications

There are a lot of STMicroelectronics STBV42-AP applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver