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BC80825WE6327HTSA1

BC80825WE6327HTSA1

BC80825WE6327HTSA1

Infineon Technologies

BC80825WE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC80825WE6327HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code compliant
Base Part Number BC808
Power - Max 250mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 200MHz
BC80825WE6327HTSA1 Product Details

BC80825WE6327HTSA1 Overview


This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.There is a 25V maximal voltage in the device due to collector-emitter breakdown.

BC80825WE6327HTSA1 Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA

BC80825WE6327HTSA1 Applications


There are a lot of Infineon Technologies BC80825WE6327HTSA1 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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