TIP47 SL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
TIP47 SL Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2016
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
40W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 300mA 10V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 1A
Voltage - Collector Emitter Breakdown (Max)
250V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
10MHz
TIP47 SL Product Details
TIP47 SL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 300mA 10V.A VCE saturation (Max) of 1V @ 200mA, 1A means Ic has reached its maximum value(saturated).The device exhibits a collector-emitter breakdown at 250V.
TIP47 SL Features
the DC current gain for this device is 30 @ 300mA 10V the vce saturation(Max) is 1V @ 200mA, 1A
TIP47 SL Applications
There are a lot of Central Semiconductor Corp TIP47 SL applications of single BJT transistors.