2SA2088T106Q Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 50mA 2V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.A VCE saturation (Max) of 500mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at -500mA for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 400MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
2SA2088T106Q Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is -500mA
a transition frequency of 400MHz
2SA2088T106Q Applications
There are a lot of ROHM Semiconductor 2SA2088T106Q applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
