2SA2088T106Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SA2088T106Q Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SA2088
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
400MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 50mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
60V
Max Frequency
10MHz
Transition Frequency
400MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
Continuous Collector Current
-500mA
Turn Off Time-Max (toff)
160ns
Height
900μm
Length
2mm
Width
1.25mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.106440
$0.10644
10
$0.100415
$1.00415
100
$0.094731
$9.4731
500
$0.089369
$44.6845
1000
$0.084310
$84.31
2SA2088T106Q Product Details
2SA2088T106Q Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 50mA 2V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.A VCE saturation (Max) of 500mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at -500mA for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 400MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
2SA2088T106Q Features
the DC current gain for this device is 120 @ 50mA 2V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 10mA, 100mA the emitter base voltage is kept at 6V the current rating of this device is -500mA a transition frequency of 400MHz
2SA2088T106Q Applications
There are a lot of ROHM Semiconductor 2SA2088T106Q applications of single BJT transistors.