DNLS350E-13 Overview

DC current gain in this device equals 100 @ 2A 2V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 290mV, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 290mV @ 200mA, 2A.A constant collector voltage of 3A is necessary for high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 50V volts.Maximum collector currents can be below 3A volts.

DNLS350E-13 Features

the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 290mV
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

DNLS350E-13 Applications

There are a lot of Diodes Incorporated DNLS350E-13 applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface