DP0150ALP4-7B Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 6V.The collector emitter saturation voltage is -300mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A -100mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.In this part, there is a transition frequency of 80MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 100mA volts.
DP0150ALP4-7B Features
the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 80MHz
DP0150ALP4-7B Applications
There are a lot of Diodes Incorporated DP0150ALP4-7B applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
