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DP0150BLP4-7

DP0150BLP4-7

DP0150BLP4-7

Diodes Incorporated

DP0150BLP4-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DP0150BLP4-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation450mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Case Connection COLLECTOR
Power - Max 450mW
Gain Bandwidth Product80MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage50V
Transition Frequency 80MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Height 350μm
Length 1mm
Width 600μm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:18618 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.086266$0.086266
500$0.063431$31.7155
1000$0.052859$52.859
2000$0.048495$96.99
5000$0.045323$226.615
10000$0.042160$421.6
15000$0.040774$611.61
50000$0.040092$2004.6

DP0150BLP4-7 Product Details

DP0150BLP4-7 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 6V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 80MHz.A breakdown input voltage of 50V volts can be used.During maximum operation, collector current can be as low as 100mA volts.

DP0150BLP4-7 Features


the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 80MHz

DP0150BLP4-7 Applications


There are a lot of Diodes Incorporated DP0150BLP4-7 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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