DP0150BLP4-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DP0150BLP4-7 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
450mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
450mW
Gain Bandwidth Product
80MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
80MHz
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
Height
350μm
Length
1mm
Width
600μm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.086266
$0.086266
500
$0.063431
$31.7155
1000
$0.052859
$52.859
2000
$0.048495
$96.99
5000
$0.045323
$226.615
10000
$0.042160
$421.6
15000
$0.040774
$611.61
50000
$0.040092
$2004.6
DP0150BLP4-7 Product Details
DP0150BLP4-7 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 6V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 80MHz.A breakdown input voltage of 50V volts can be used.During maximum operation, collector current can be as low as 100mA volts.
DP0150BLP4-7 Features
the DC current gain for this device is 200 @ 2mA 6V the vce saturation(Max) is 300mV @ 10mA, 100mA the emitter base voltage is kept at 5V a transition frequency of 80MHz
DP0150BLP4-7 Applications
There are a lot of Diodes Incorporated DP0150BLP4-7 applications of single BJT transistors.