DPLS160V-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DPLS160V-7 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Weight
3.005049mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
220MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DPLS160
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Gain Bandwidth Product
220MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
330mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
220MHz
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
250
Height
600μm
Length
1.6mm
Width
1.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$12.396560
$12.39656
10
$11.694868
$116.94868
100
$11.032894
$1103.2894
500
$10.408391
$5204.1955
1000
$9.819237
$9819.237
DPLS160V-7 Product Details
DPLS160V-7 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 500mA 5V.When VCE saturation is 330mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As a result, the part has a transition frequency of 220MHz.There is a breakdown input voltage of 60V volts that it can take.During maximum operation, collector current can be as low as 1A volts.
DPLS160V-7 Features
the DC current gain for this device is 150 @ 500mA 5V the vce saturation(Max) is 330mV @ 100mA, 1A the emitter base voltage is kept at 5V a transition frequency of 220MHz
DPLS160V-7 Applications
There are a lot of Diodes Incorporated DPLS160V-7 applications of single BJT transistors.