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DPLS160V-7

DPLS160V-7

DPLS160V-7

Diodes Incorporated

DPLS160V-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DPLS160V-7 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Weight 3.005049mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 220MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DPLS160
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Gain Bandwidth Product 220MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 330mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 220MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 250
Height 600μm
Length 1.6mm
Width 1.2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $12.396560 $12.39656
10 $11.694868 $116.94868
100 $11.032894 $1103.2894
500 $10.408391 $5204.1955
1000 $9.819237 $9819.237
DPLS160V-7 Product Details

DPLS160V-7 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 500mA 5V.When VCE saturation is 330mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As a result, the part has a transition frequency of 220MHz.There is a breakdown input voltage of 60V volts that it can take.During maximum operation, collector current can be as low as 1A volts.

DPLS160V-7 Features


the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 220MHz

DPLS160V-7 Applications


There are a lot of Diodes Incorporated DPLS160V-7 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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