PN100RM Overview

DC current gain in this device equals 100 @ 150mA 5V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.When VCE saturation is 400mV @ 20mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Breakdown input voltage is 45V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

PN100RM Features

the DC current gain for this device is 100 @ 150mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA

PN100RM Applications

There are a lot of ON Semiconductor PN100RM applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver