KSC2690AYS datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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KSC2690AYS Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
160V
Max Power Dissipation
1.2W
Current Rating
1.2A
Frequency
155MHz
Base Part Number
KSC2690A
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.2W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
155MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
1.2A
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 5mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 200mA, 1A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
155MHz
Collector Emitter Saturation Voltage
700mV
Max Breakdown Voltage
160V
Collector Base Voltage (VCBO)
160V
Emitter Base Voltage (VEBO)
5V
hFE Min
60
Height
11mm
Length
8mm
Width
3.25mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.59000
$0.59
10
$0.51000
$5.1
100
$0.38420
$38.42
500
$0.30432
$152.16
1,000
$0.23775
$0.23775
KSC2690AYS Product Details
KSC2690AYS Description
The KSC2690AYS is an NPN Epitaxial Silicon Transistor that offers a 160V collector-base voltage and 1.2A collector current. It is suitable for audio frequency and high-frequency power amplifier applications.