FMMT614QTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT614QTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Power - Max
500mW
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
15000 @ 100mA 5V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1V @ 5mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
500mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.22204
$0.66612
FMMT614QTA Product Details
FMMT614QTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15000 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 5mA, 500mA.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
FMMT614QTA Features
the DC current gain for this device is 15000 @ 100mA 5V the vce saturation(Max) is 1V @ 5mA, 500mA
FMMT614QTA Applications
There are a lot of Diodes Incorporated FMMT614QTA applications of single BJT transistors.