DSS3540M-7B Overview

In this device, the DC current gain is 150 @ 100mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -350mV, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -500mA to achieve high efficiency.Keeping the emitter base voltage at -6V can result in a high level of efficiency.A transition frequency of 100MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 500mA volts.

DSS3540M-7B Features

the DC current gain for this device is 150 @ 100mA 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 100MHz

DSS3540M-7B Applications

There are a lot of Diodes Incorporated DSS3540M-7B applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting