DSS4240V-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DSS4240V-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Weight
3.005049mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
600mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DSS4240
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power Dissipation
600mW
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
400mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
400mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
hFE Min
300
Height
600μm
Length
1.6mm
Width
1.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.062960
$0.06296
500
$0.046294
$23.147
1000
$0.038578
$38.578
2000
$0.035393
$70.786
5000
$0.033078
$165.39
10000
$0.030770
$307.7
15000
$0.029758
$446.37
50000
$0.029261
$1463.05
DSS4240V-7 Product Details
DSS4240V-7 Overview
This device has a DC current gain of 300 @ 500mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 200mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.In this part, there is a transition frequency of 150MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 2A volts is possible.
DSS4240V-7 Features
the DC current gain for this device is 300 @ 500mA 5V a collector emitter saturation voltage of 400mV the vce saturation(Max) is 400mV @ 200mA, 2A the emitter base voltage is kept at 5V a transition frequency of 150MHz
DSS4240V-7 Applications
There are a lot of Diodes Incorporated DSS4240V-7 applications of single BJT transistors.