DSS4320T-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DSS4320T-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
600mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DSS4320
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
600mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
310mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
310mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
5V
hFE Min
220
Height
1mm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.058480
$0.05848
500
$0.043000
$21.5
1000
$0.035833
$35.833
2000
$0.032875
$65.75
5000
$0.030724
$153.62
10000
$0.028580
$285.8
15000
$0.027641
$414.615
50000
$0.027179
$1358.95
DSS4320T-7 Product Details
DSS4320T-7 Overview
In this device, the DC current gain is 220 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 310mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 310mV @ 300mA, 3A.Emitter base voltages of 5V can achieve high levels of efficiency.As you can see, the part has a transition frequency of 100MHz.As a result, it can handle voltages as low as 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
DSS4320T-7 Features
the DC current gain for this device is 220 @ 1A 2V a collector emitter saturation voltage of 310mV the vce saturation(Max) is 310mV @ 300mA, 3A the emitter base voltage is kept at 5V a transition frequency of 100MHz
DSS4320T-7 Applications
There are a lot of Diodes Incorporated DSS4320T-7 applications of single BJT transistors.