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DSS4320T-7

DSS4320T-7

DSS4320T-7

Diodes Incorporated

DSS4320T-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DSS4320T-7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 600mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DSS4320
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 600mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 310mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 310mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 5V
hFE Min 220
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.058480 $0.05848
500 $0.043000 $21.5
1000 $0.035833 $35.833
2000 $0.032875 $65.75
5000 $0.030724 $153.62
10000 $0.028580 $285.8
15000 $0.027641 $414.615
50000 $0.027179 $1358.95
DSS4320T-7 Product Details

DSS4320T-7 Overview


In this device, the DC current gain is 220 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 310mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 310mV @ 300mA, 3A.Emitter base voltages of 5V can achieve high levels of efficiency.As you can see, the part has a transition frequency of 100MHz.As a result, it can handle voltages as low as 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

DSS4320T-7 Features


the DC current gain for this device is 220 @ 1A 2V
a collector emitter saturation voltage of 310mV
the vce saturation(Max) is 310mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

DSS4320T-7 Applications


There are a lot of Diodes Incorporated DSS4320T-7 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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