DSS60601MZ4-13 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1A 2V.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.As a result, the part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.

DSS60601MZ4-13 Features

the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 600mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

DSS60601MZ4-13 Applications

There are a lot of Diodes Incorporated DSS60601MZ4-13 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting