DXTP560BP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXTP560BP5-13 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerDI™ 5
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
2.8W
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DXTP560
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
2.8W
Transistor Application
SWITCHING
Gain Bandwidth Product
60MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 50mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 50mA
Collector Emitter Breakdown Voltage
500V
Transition Frequency
60MHz
Collector Emitter Saturation Voltage
-200mV
Max Breakdown Voltage
500V
Collector Base Voltage (VCBO)
-500V
Emitter Base Voltage (VEBO)
-7V
Continuous Collector Current
-150mA
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.917112
$0.917112
10
$0.865200
$8.652
100
$0.816226
$81.6226
500
$0.770025
$385.0125
1000
$0.726439
$726.439
DXTP560BP5-13 Product Details
DXTP560BP5-13 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 50mA 10V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at -150mA to achieve high efficiency.Emitter base voltages of -7V can achieve high levels of efficiency.A transition frequency of 60MHz is present in the part.Input voltage breakdown is available at 500V volts.A maximum collector current of 150mA volts is possible.
DXTP560BP5-13 Features
the DC current gain for this device is 80 @ 50mA 10V a collector emitter saturation voltage of -200mV the vce saturation(Max) is 500mV @ 10mA, 50mA the emitter base voltage is kept at -7V a transition frequency of 60MHz
DXTP560BP5-13 Applications
There are a lot of Diodes Incorporated DXTP560BP5-13 applications of single BJT transistors.