FMMT596TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT596TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Other Transistors
Voltage - Rated DC
-200V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT596
Number of Elements
1
Voltage
200V
Element Configuration
Single
Current
3A
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 250mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
350mV @ 25mA, 250mA
Collector Emitter Breakdown Voltage
200V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-350mV
Max Breakdown Voltage
200V
Collector Base Voltage (VCBO)
220V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
-300mA
Height
1.02mm
Length
3.04mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.244896
$0.244896
10
$0.231034
$2.31034
100
$0.217957
$21.7957
500
$0.205619
$102.8095
1000
$0.193981
$193.981
FMMT596TA Product Details
FMMT596TA Overview
In this device, the DC current gain is 85 @ 250mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -350mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 25mA, 250mA.Single BJT transistor is recommended to keep the continuous collector voltage at -300mA in order to achieve high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.Parts of this part have transition frequencies of 150MHz.An input voltage of 200V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 300mA volts.
FMMT596TA Features
the DC current gain for this device is 85 @ 250mA 10V a collector emitter saturation voltage of -350mV the vce saturation(Max) is 350mV @ 25mA, 250mA the emitter base voltage is kept at 5V the current rating of this device is -500mA a transition frequency of 150MHz
FMMT596TA Applications
There are a lot of Diodes Incorporated FMMT596TA applications of single BJT transistors.