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MJ11015G

MJ11015G

MJ11015G

ON Semiconductor

MJ11015G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJ11015G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Surface Mount NO
Number of Pins 2
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Tray
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -120V
Max Power Dissipation 200W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating -30A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 2
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 30A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 20A 5V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 4V @ 300mA, 30A
Collector Emitter Breakdown Voltage 120V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 3V
Frequency - Transition 4MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Continuous Collector Current 30A
Height 8.51mm
Length 39.37mm
Width 26.67mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.43000 $7.43
10 $6.71500 $67.15
100 $5.55930 $555.93
500 $4.84100 $2420.5
1,000 $4.21635 $4.21635
MJ11015G Product Details

MJ11015G Overview


This device has a DC current gain of 1000 @ 20A 5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltage should be kept at 30A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-30A).As you can see, the part has a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 30A volts.

MJ11015G Features


the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is -30A
a transition frequency of 4MHz

MJ11015G Applications


There are a lot of ON Semiconductor MJ11015G applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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