2SA2153-TD-E Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -200mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at -6V to achieve high efficiency.This device can take an input voltage of 50V volts before it breaks down.During maximum operation, collector current can be as low as 2A volts.

2SA2153-TD-E Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at -6V

2SA2153-TD-E Applications

There are a lot of ON Semiconductor 2SA2153-TD-E applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver