DZT5551-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DZT5551-13 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
300MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DZT5551
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
200V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
115mV
Max Breakdown Voltage
160V
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
6V
hFE Min
80
Max Junction Temperature (Tj)
150°C
Height
1.8mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.296760
$0.29676
10
$0.279962
$2.79962
100
$0.264115
$26.4115
500
$0.249165
$124.5825
1000
$0.235062
$235.062
DZT5551-13 Product Details
DZT5551-13 Overview
DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 115mV.A VCE saturation (Max) of 200mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Parts of this part have transition frequencies of 100MHz.This device can take an input voltage of 160V volts before it breaks down.Maximum collector currents can be below 600mA volts.
DZT5551-13 Features
the DC current gain for this device is 80 @ 10mA 5V a collector emitter saturation voltage of 115mV the vce saturation(Max) is 200mV @ 5mA, 50mA the emitter base voltage is kept at 6V a transition frequency of 100MHz
DZT5551-13 Applications
There are a lot of Diodes Incorporated DZT5551-13 applications of single BJT transistors.