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DZT751-13

DZT751-13

DZT751-13

Diodes Incorporated

DZT751-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DZT751-13 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 145MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DZT751
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Power - Max 1W
Transistor Application SWITCHING
Gain Bandwidth Product 145MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 145MHz
Collector Emitter Saturation Voltage -600mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) -5V
Height 1.6mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.899200 $4.8992
10 $4.621887 $46.21887
100 $4.360271 $436.0271
500 $4.113463 $2056.7315
1000 $3.880625 $3880.625
DZT751-13 Product Details

DZT751-13 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 2V DC current gain.A collector emitter saturation voltage of -600mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 300mA, 3A.With the emitter base voltage set at -5V, an efficient operation can be achieved.145MHz is present in the transition frequency.There is a breakdown input voltage of 60V volts that it can take.Maximum collector currents can be below 3A volts.

DZT751-13 Features


the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at -5V
a transition frequency of 145MHz

DZT751-13 Applications


There are a lot of Diodes Incorporated DZT751-13 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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