DZT751-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 2V DC current gain.A collector emitter saturation voltage of -600mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 300mA, 3A.With the emitter base voltage set at -5V, an efficient operation can be achieved.145MHz is present in the transition frequency.There is a breakdown input voltage of 60V volts that it can take.Maximum collector currents can be below 3A volts.
DZT751-13 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at -5V
a transition frequency of 145MHz
DZT751-13 Applications
There are a lot of Diodes Incorporated DZT751-13 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
