PBSS5360XF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS5360XF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
-55°C~150°C TA
Packaging
Tape & Reel (TR)
Published
2017
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Pin Count
3
Power - Max
1.35W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 50mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
550mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
65MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.230640
$0.23064
10
$0.217585
$2.17585
100
$0.205269
$20.5269
500
$0.193650
$96.825
1000
$0.182688
$182.688
PBSS5360XF Product Details
PBSS5360XF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 50mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 550mV @ 300mA, 3A.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
PBSS5360XF Features
the DC current gain for this device is 150 @ 50mA 5V the vce saturation(Max) is 550mV @ 300mA, 3A
PBSS5360XF Applications
There are a lot of Nexperia USA Inc. PBSS5360XF applications of single BJT transistors.