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PBSS5360XF

PBSS5360XF

PBSS5360XF

Nexperia USA Inc.

PBSS5360XF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5360XF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature -55°C~150°C TA
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count 3
Power - Max 1.35W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 50mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 550mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 65MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.230640 $0.23064
10 $0.217585 $2.17585
100 $0.205269 $20.5269
500 $0.193650 $96.825
1000 $0.182688 $182.688
PBSS5360XF Product Details

PBSS5360XF Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 50mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 550mV @ 300mA, 3A.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.

PBSS5360XF Features


the DC current gain for this device is 150 @ 50mA 5V
the vce saturation(Max) is 550mV @ 300mA, 3A

PBSS5360XF Applications


There are a lot of Nexperia USA Inc. PBSS5360XF applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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