MMSS8550-H-TP Overview

In this device, the DC current gain is 120 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 80mA, 800mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.The device has a 25V maximal voltage - Collector Emitter Breakdown.

MMSS8550-H-TP Features

the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 80mA, 800mA
a transition frequency of 100MHz

MMSS8550-H-TP Applications

There are a lot of Micro Commercial Co MMSS8550-H-TP applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver