FCX555TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 25mA, 250mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -700mA.There is a transition frequency of 100MHz in the part.Single BJT transistor can take a breakdown input voltage of 180V volts.During maximum operation, collector current can be as low as 700mA volts.
FCX555TA Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 25mA, 250mA
the emitter base voltage is kept at -7V
the current rating of this device is -700mA
a transition frequency of 100MHz
FCX555TA Applications
There are a lot of Diodes Incorporated FCX555TA applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
