FMMT459TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT459TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
450V
Max Power Dissipation
806mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
150mA
Frequency
50MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
FMMT459
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
806mW
Power - Max
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
450V
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
90mV @ 6mA, 50mA
Collector Emitter Breakdown Voltage
450V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
90mV
Max Breakdown Voltage
450V
Collector Base Voltage (VCBO)
500V
Emitter Base Voltage (VEBO)
7V
Continuous Collector Current
150mA
Height
1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.20995
$0.62985
6,000
$0.19640
$1.1784
15,000
$0.18286
$2.7429
30,000
$0.18060
$5.418
FMMT459TA Product Details
FMMT459TA Overview
This device has a DC current gain of 50 @ 30mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 90mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 90mV @ 6mA, 50mA.For high efficiency, the continuous collector voltage must be kept at 150mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 150mA current rating.As you can see, the part has a transition frequency of 50MHz.Breakdown input voltage is 450V volts.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.
FMMT459TA Features
the DC current gain for this device is 50 @ 30mA 10V a collector emitter saturation voltage of 90mV the vce saturation(Max) is 90mV @ 6mA, 50mA the emitter base voltage is kept at 7V the current rating of this device is 150mA a transition frequency of 50MHz
FMMT459TA Applications
There are a lot of Diodes Incorporated FMMT459TA applications of single BJT transistors.