BC547BZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BC547BZL1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
625mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.10000
$0.1
500
$0.099
$49.5
1000
$0.098
$98
1500
$0.097
$145.5
2000
$0.096
$192
2500
$0.095
$237.5
BC547BZL1G Product Details
BC547BZL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor comes in a supplier device package of TO-92-3.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC547BZL1G Features
the DC current gain for this device is 200 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA the supplier device package of TO-92-3
BC547BZL1G Applications
There are a lot of Rochester Electronics, LLC BC547BZL1G applications of single BJT transistors.