2N6039G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6039G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
4A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N6039
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
40W
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
25MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
4A
Height
2.66mm
Length
11.04mm
Width
7.74mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.79000
$0.79
10
$0.69500
$6.95
100
$0.53670
$53.67
500
$0.42792
$213.96
1,000
$0.34586
$0.34586
2N6039G Product Details
2N6039G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 2A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).A constant collector voltage of 4A is necessary for high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 25MHz.In extreme cases, the collector current can be as low as 4A volts.
2N6039G Features
the DC current gain for this device is 750 @ 2A 3V a collector emitter saturation voltage of 2V the vce saturation(Max) is 3V @ 40mA, 4A the emitter base voltage is kept at 5V the current rating of this device is 4A a transition frequency of 25MHz
2N6039G Applications
There are a lot of ON Semiconductor 2N6039G applications of single BJT transistors.