Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2N6039G

2N6039G

2N6039G

ON Semiconductor

2N6039G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N6039G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) 260
Current Rating 4A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N6039
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 40W
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 25MHz
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 4A
Height 2.66mm
Length 11.04mm
Width 7.74mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.79000 $0.79
10 $0.69500 $6.95
100 $0.53670 $53.67
500 $0.42792 $213.96
1,000 $0.34586 $0.34586
2N6039G Product Details

2N6039G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 2A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).A constant collector voltage of 4A is necessary for high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 25MHz.In extreme cases, the collector current can be as low as 4A volts.

2N6039G Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz

2N6039G Applications


There are a lot of ON Semiconductor 2N6039G applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News