KSB1116SYBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 135 @ 100mA 2V.A VCE saturation (Max) of 300mV @ 50mA, 1A means Ic has reached its maximum value(saturated).The part has a transition frequency of 120MHz.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.
KSB1116SYBU Features
the DC current gain for this device is 135 @ 100mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
a transition frequency of 120MHz
KSB1116SYBU Applications
There are a lot of Rochester Electronics, LLC KSB1116SYBU applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
