FMMT494TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT494TA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
120V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT494
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 250mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
120V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
300mV
Max Breakdown Voltage
120V
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
7V
Continuous Collector Current
1A
Height
1.1mm
Length
3mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.312912
$0.312912
10
$0.295200
$2.952
100
$0.278491
$27.8491
500
$0.262727
$131.3635
1000
$0.247856
$247.856
FMMT494TA Product Details
FMMT494TA Overview
DC current gain in this device equals 100 @ 250mA 10V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at 1A for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 100MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 120V volts.Maximum collector currents can be below 1A volts.
FMMT494TA Features
the DC current gain for this device is 100 @ 250mA 10V a collector emitter saturation voltage of 300mV the vce saturation(Max) is 300mV @ 50mA, 500mA the emitter base voltage is kept at 7V the current rating of this device is 100mA a transition frequency of 100MHz
FMMT494TA Applications
There are a lot of Diodes Incorporated FMMT494TA applications of single BJT transistors.