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FMMT494TA

FMMT494TA

FMMT494TA

Diodes Incorporated

FMMT494TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT494TA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 120V
Max Power Dissipation500mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating100mA
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT494
Number of Elements 1
Element ConfigurationSingle
Power Dissipation500mW
Transistor Application SWITCHING
Gain Bandwidth Product100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 250mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage120V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage300mV
Max Breakdown Voltage 120V
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 1A
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:15182 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.312912$0.312912
10$0.295200$2.952
100$0.278491$27.8491
500$0.262727$131.3635
1000$0.247856$247.856

FMMT494TA Product Details

FMMT494TA Overview


DC current gain in this device equals 100 @ 250mA 10V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at 1A for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 100MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 120V volts.Maximum collector currents can be below 1A volts.

FMMT494TA Features


the DC current gain for this device is 100 @ 250mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
a transition frequency of 100MHz

FMMT494TA Applications


There are a lot of Diodes Incorporated FMMT494TA applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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