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DCP69-16-13

DCP69-16-13

DCP69-16-13

Diodes Incorporated

DCP69-16-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DCP69-16-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DCP69
Pin Count4
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage20V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage-500mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) -5V
Height 1.6mm
Length 6.5mm
Width 3.5mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:16488 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$9.965440$9.96544
10$9.401358$94.01358
100$8.869206$886.9206
500$8.367176$4183.588
1000$7.893562$7893.562

DCP69-16-13 Product Details

DCP69-16-13 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.Parts of this part have transition frequencies of 200MHz.Input voltage breakdown is available at 20V volts.Maximum collector currents can be below 1A volts.

DCP69-16-13 Features


the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 200MHz

DCP69-16-13 Applications


There are a lot of Diodes Incorporated DCP69-16-13 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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