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FJA4313OTU

FJA4313OTU

FJA4313OTU

ON Semiconductor

FJA4313OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJA4313OTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 140V
Max Power Dissipation130W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating10A
Frequency 30MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation130W
Transistor Application AMPLIFIER
Gain Bandwidth Product30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 17A
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 7A 5V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage250V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage400mV
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 5V
hFE Min 55
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1708 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.619740$6.61974
10$6.245038$62.45038
100$5.891545$589.1545
500$5.558061$2779.0305
1000$5.243454$5243.454

FJA4313OTU Product Details

FJA4313OTU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 35 @ 7A 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 800mA, 8A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.30MHz is present in the transition frequency.Collector current can be as low as 17A volts at its maximum.

FJA4313OTU Features


the DC current gain for this device is 35 @ 7A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 30MHz

FJA4313OTU Applications


There are a lot of ON Semiconductor FJA4313OTU applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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