FJA4313OTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 35 @ 7A 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 800mA, 8A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.30MHz is present in the transition frequency.Collector current can be as low as 17A volts at its maximum.
FJA4313OTU Features
the DC current gain for this device is 35 @ 7A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 30MHz
FJA4313OTU Applications
There are a lot of ON Semiconductor FJA4313OTU applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter