FJA4313OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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FJA4313OTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
140V
Max Power Dissipation
130W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
10A
Frequency
30MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
130W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
17A
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 7A 5V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Collector Emitter Breakdown Voltage
250V
Transition Frequency
30MHz
Collector Emitter Saturation Voltage
400mV
Collector Base Voltage (VCBO)
250V
Emitter Base Voltage (VEBO)
5V
hFE Min
55
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.619740
$6.61974
10
$6.245038
$62.45038
100
$5.891545
$589.1545
500
$5.558061
$2779.0305
1000
$5.243454
$5243.454
FJA4313OTU Product Details
FJA4313OTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 35 @ 7A 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 800mA, 8A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.30MHz is present in the transition frequency.Collector current can be as low as 17A volts at its maximum.
FJA4313OTU Features
the DC current gain for this device is 35 @ 7A 5V a collector emitter saturation voltage of 400mV the vce saturation(Max) is 3V @ 800mA, 8A the emitter base voltage is kept at 5V the current rating of this device is 10A a transition frequency of 30MHz
FJA4313OTU Applications
There are a lot of ON Semiconductor FJA4313OTU applications of single BJT transistors.