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KSC5502DTTU

KSC5502DTTU

KSC5502DTTU

ON Semiconductor

KSC5502DTTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC5502DTTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Other Transistors
Max Power Dissipation 50W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number KSC5502
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 11MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 4 @ 1A 1V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.5V @ 200mA, 1A
Collector Emitter Breakdown Voltage 600V
Current - Collector (Ic) (Max) 2A
Transition Frequency 11MHz
Collector Base Voltage (VCBO) 1.2kV
Emitter Base Voltage (VEBO) 12V
hFE Min 12
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $12.295120 $12.29512
10 $11.599170 $115.9917
100 $10.942613 $1094.2613
500 $10.323220 $5161.61
1000 $9.738887 $9738.887
KSC5502DTTU Product Details

KSC5502DTTU Overview


This device has a DC current gain of 4 @ 1A 1V, which is the ratio between the collector current and the base current.When VCE saturation is 1.5V @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.The part has a transition frequency of 11MHz.Collector current can be as low as 2A volts at its maximum.

KSC5502DTTU Features


the DC current gain for this device is 4 @ 1A 1V
the vce saturation(Max) is 1.5V @ 200mA, 1A
the emitter base voltage is kept at 12V
a transition frequency of 11MHz

KSC5502DTTU Applications


There are a lot of ON Semiconductor KSC5502DTTU applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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