KSC5502DTTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC5502DTTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Max Power Dissipation
50W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
KSC5502
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
11MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
4 @ 1A 1V
Current - Collector Cutoff (Max)
100μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.5V @ 200mA, 1A
Collector Emitter Breakdown Voltage
600V
Current - Collector (Ic) (Max)
2A
Transition Frequency
11MHz
Collector Base Voltage (VCBO)
1.2kV
Emitter Base Voltage (VEBO)
12V
hFE Min
12
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$12.295120
$12.29512
10
$11.599170
$115.9917
100
$10.942613
$1094.2613
500
$10.323220
$5161.61
1000
$9.738887
$9738.887
KSC5502DTTU Product Details
KSC5502DTTU Overview
This device has a DC current gain of 4 @ 1A 1V, which is the ratio between the collector current and the base current.When VCE saturation is 1.5V @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.The part has a transition frequency of 11MHz.Collector current can be as low as 2A volts at its maximum.
KSC5502DTTU Features
the DC current gain for this device is 4 @ 1A 1V the vce saturation(Max) is 1.5V @ 200mA, 1A the emitter base voltage is kept at 12V a transition frequency of 11MHz
KSC5502DTTU Applications
There are a lot of ON Semiconductor KSC5502DTTU applications of single BJT transistors.