MPSW05G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MPSW05G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 250mA 1V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
400mV @ 10mA, 250mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
50MHz
Frequency - Transition
50MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.09000
$0.09
500
$0.0891
$44.55
1000
$0.0882
$88.2
1500
$0.0873
$130.95
2000
$0.0864
$172.8
2500
$0.0855
$213.75
MPSW05G Product Details
MPSW05G Overview
In this device, the DC current gain is 60 @ 250mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 10mA, 250mA means Ic has reached its maximum value(saturated).Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
MPSW05G Features
the DC current gain for this device is 60 @ 250mA 1V the vce saturation(Max) is 400mV @ 10mA, 250mA a transition frequency of 50MHz
MPSW05G Applications
There are a lot of Rochester Electronics, LLC MPSW05G applications of single BJT transistors.