BCP5410TA Overview

In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.An input voltage of 45V volts is the breakdown voltage.The maximum collector current is 1A volts.

BCP5410TA Features

the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

BCP5410TA Applications

There are a lot of Diodes Incorporated BCP5410TA applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface