FMMT591TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 5V.The collector emitter saturation voltage is -295mV, giving you a wide variety of design options.When VCE saturation is 350mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.150MHz is present in the transition frequency.A breakdown input voltage of 60V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
FMMT591TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -295mV
the vce saturation(Max) is 350mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
FMMT591TA Applications
There are a lot of Diodes Incorporated FMMT591TA applications of single BJT transistors.
- Muting
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- Driver
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- Inverter
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- Interface
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