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JAN2N1893

JAN2N1893

JAN2N1893

Microsemi Corporation

JAN2N1893 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N1893 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/182
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 800mW
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 800mW
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 5V @ 15mA, 150mA
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $26.44000 $26.44
10 $24.45600 $244.56
25 $22.47320 $561.83
JAN2N1893 Product Details

JAN2N1893 Overview


DC current gain in this device equals 40 @ 150mA 10V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 5V @ 15mA, 150mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

JAN2N1893 Features


the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 5V @ 15mA, 150mA
the emitter base voltage is kept at 7V

JAN2N1893 Applications


There are a lot of Microsemi Corporation JAN2N1893 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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