FJC1308RTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
FJC1308RTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-F3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
500mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 500mA 2V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
450mV @ 150mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
3A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.07000
$0.07
500
$0.0693
$34.65
1000
$0.0686
$68.6
1500
$0.0679
$101.85
2000
$0.0672
$134.4
2500
$0.0665
$166.25
FJC1308RTF Product Details
FJC1308RTF Overview
In this device, the DC current gain is 180 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 450mV @ 150mA, 1.5A means Ic has reached its maximum value(saturated).The device exhibits a collector-emitter breakdown at 30V.
FJC1308RTF Features
the DC current gain for this device is 180 @ 500mA 2V the vce saturation(Max) is 450mV @ 150mA, 1.5A
FJC1308RTF Applications
There are a lot of Rochester Electronics, LLC FJC1308RTF applications of single BJT transistors.