FMMT493TC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT493TC Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT493
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 250mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
600mV
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
1A
Height
1.1mm
Length
3mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.155237
$0.155237
10
$0.146450
$1.4645
100
$0.138160
$13.816
500
$0.130340
$65.17
1000
$0.122962
$122.962
FMMT493TC Product Details
FMMT493TC Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 250mA 10V.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltage should be kept at 1A for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.There is a transition frequency of 150MHz in the part.Collector current can be as low as 1A volts at its maximum.
FMMT493TC Features
the DC current gain for this device is 100 @ 250mA 10V a collector emitter saturation voltage of 600mV the vce saturation(Max) is 600mV @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 150MHz
FMMT493TC Applications
There are a lot of Diodes Incorporated FMMT493TC applications of single BJT transistors.