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FMMT493TC

FMMT493TC

FMMT493TC

Diodes Incorporated

FMMT493TC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT493TC Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT493
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 250mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 600mV
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 1A
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.155237 $0.155237
10 $0.146450 $1.4645
100 $0.138160 $13.816
500 $0.130340 $65.17
1000 $0.122962 $122.962
FMMT493TC Product Details

FMMT493TC Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 250mA 10V.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltage should be kept at 1A for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.There is a transition frequency of 150MHz in the part.Collector current can be as low as 1A volts at its maximum.

FMMT493TC Features


the DC current gain for this device is 100 @ 250mA 10V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz

FMMT493TC Applications


There are a lot of Diodes Incorporated FMMT493TC applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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