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FMMT593TA

FMMT593TA

FMMT593TA

Diodes Incorporated

FMMT593TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT593TA Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1A
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT593
Number of Elements 1
Voltage 100V
Element Configuration Single
Current 1A
Power Dissipation 500mW
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -100V
Max Collector Current -1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage -100V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) -120V
Emitter Base Voltage (VEBO) -7V
hFE Min 100
Max Junction Temperature (Tj) 150°C
Continuous Collector Current -1A
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.12994 $0.38982
6,000 $0.12206 $0.73236
15,000 $0.11419 $1.71285
30,000 $0.10500 $3.15
FMMT593TA Product Details

FMMT593TA Overview


DC current gain in this device equals 100 @ 500mA 5V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 50mA, 500mA.Maintaining the continuous collector voltage at -1A is essential for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can be broken down at a voltage of 100V volts.Single BJT transistor is possible to have a collector current as low as -1A volts at Single BJT transistors maximum.

FMMT593TA Features


the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at -7V
the current rating of this device is -1A
a transition frequency of 50MHz

FMMT593TA Applications


There are a lot of Diodes Incorporated FMMT593TA applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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