FMMT593TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT593TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
50MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT593
Number of Elements
1
Voltage
100V
Element Configuration
Single
Current
1A
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-100V
Max Collector Current
-1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
-100V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
-300mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
-120V
Emitter Base Voltage (VEBO)
-7V
hFE Min
100
Max Junction Temperature (Tj)
150°C
Continuous Collector Current
-1A
Height
1.1mm
Length
3mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.12994
$0.38982
6,000
$0.12206
$0.73236
15,000
$0.11419
$1.71285
30,000
$0.10500
$3.15
FMMT593TA Product Details
FMMT593TA Overview
DC current gain in this device equals 100 @ 500mA 5V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 50mA, 500mA.Maintaining the continuous collector voltage at -1A is essential for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can be broken down at a voltage of 100V volts.Single BJT transistor is possible to have a collector current as low as -1A volts at Single BJT transistors maximum.
FMMT593TA Features
the DC current gain for this device is 100 @ 500mA 5V a collector emitter saturation voltage of -300mV the vce saturation(Max) is 300mV @ 50mA, 500mA the emitter base voltage is kept at -7V the current rating of this device is -1A a transition frequency of 50MHz
FMMT593TA Applications
There are a lot of Diodes Incorporated FMMT593TA applications of single BJT transistors.