SBSP52T1G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 500mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.3V @ 500μA, 500mA.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

SBSP52T1G Features

the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.3V @ 500μA, 500mA

SBSP52T1G Applications

There are a lot of ON Semiconductor SBSP52T1G applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter