FZT753TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT753TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Voltage - Rated DC
-100V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-2A
Frequency
140MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT753
Number of Elements
1
Voltage
100V
Element Configuration
Single
Current
2A
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
140MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
140MHz
Collector Emitter Saturation Voltage
-300mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
-2A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.68000
$0.68
500
$0.6732
$336.6
1000
$0.6664
$666.4
1500
$0.6596
$989.4
2000
$0.6528
$1305.6
2500
$0.646
$1615
FZT753TA Product Details
FZT753TA Overview
This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.Continuous collector voltages of -2A should be maintained to achieve high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -2A.In this part, there is a transition frequency of 140MHz.There is a breakdown input voltage of 100V volts that it can take.The maximum collector current is 2A volts.
FZT753TA Features
the DC current gain for this device is 100 @ 500mA 2V a collector emitter saturation voltage of -300mV the vce saturation(Max) is 500mV @ 200mA, 2A the emitter base voltage is kept at 5V the current rating of this device is -2A a transition frequency of 140MHz
FZT753TA Applications
There are a lot of Diodes Incorporated FZT753TA applications of single BJT transistors.