BC857A-7-F Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 125 @ 2mA 5V.With a collector emitter saturation voltage of 650mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.Emitter base voltages of 5V can achieve high levels of efficiency.In this part, there is a transition frequency of 200MHz.An input voltage of 45V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 100mA volts.

BC857A-7-F Features

the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

BC857A-7-F Applications

There are a lot of Diodes Incorporated BC857A-7-F applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter