FMMT6517TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT6517TA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Voltage - Rated DC
350V
Max Power Dissipation
330mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
Frequency
50MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT6517
Number of Elements
1
Element Configuration
Single
Power Dissipation
330mW
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
350V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 50mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 5mA, 50mA
Collector Emitter Breakdown Voltage
350V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
350V
Collector Base Voltage (VCBO)
350V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
500mA
Height
1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.166560
$0.16656
10
$0.157132
$1.57132
100
$0.148238
$14.8238
500
$0.139847
$69.9235
1000
$0.131931
$131.931
FMMT6517TA Product Details
FMMT6517TA Overview
In this device, the DC current gain is 20 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5mA, 50mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 50MHz.Single BJT transistor can take a breakdown input voltage of 350V volts.A maximum collector current of 500mA volts is possible.
FMMT6517TA Features
the DC current gain for this device is 20 @ 50mA 10V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 5mA, 50mA the emitter base voltage is kept at 5V the current rating of this device is 500mA a transition frequency of 50MHz
FMMT6517TA Applications
There are a lot of Diodes Incorporated FMMT6517TA applications of single BJT transistors.