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FMMT6517TA

FMMT6517TA

FMMT6517TA

Diodes Incorporated

FMMT6517TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT6517TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Voltage - Rated DC 350V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT6517
Number of Elements 1
Element Configuration Single
Power Dissipation 330mW
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Collector Emitter Breakdown Voltage 350V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 350V
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 500mA
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.166560 $0.16656
10 $0.157132 $1.57132
100 $0.148238 $14.8238
500 $0.139847 $69.9235
1000 $0.131931 $131.931
FMMT6517TA Product Details

FMMT6517TA Overview


In this device, the DC current gain is 20 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5mA, 50mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 50MHz.Single BJT transistor can take a breakdown input voltage of 350V volts.A maximum collector current of 500mA volts is possible.

FMMT6517TA Features


the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz

FMMT6517TA Applications


There are a lot of Diodes Incorporated FMMT6517TA applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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