FMMT717TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT717TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-12V
Max Power Dissipation
625mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-2.5A
Frequency
110MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT717
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
110MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
220mV @ 50mA, 2.5A
Collector Emitter Breakdown Voltage
12V
Transition Frequency
110MHz
Collector Emitter Saturation Voltage
-180mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
12V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
-2.5A
Height
1mm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.46000
$0.46
500
$0.4554
$227.7
1000
$0.4508
$450.8
1500
$0.4462
$669.3
2000
$0.4416
$883.2
2500
$0.437
$1092.5
FMMT717TA Product Details
FMMT717TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 100mA 2V.The collector emitter saturation voltage is -180mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In order to achieve high efficiency, the continuous collector voltage should be kept at -2.5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -2.5A.Single BJT transistor contains a transSingle BJT transistorion frequency of 110MHz.Single BJT transistor can be broken down at a voltage of 12V volts.In extreme cases, the collector current can be as low as 2.5A volts.
FMMT717TA Features
the DC current gain for this device is 300 @ 100mA 2V a collector emitter saturation voltage of -180mV the vce saturation(Max) is 220mV @ 50mA, 2.5A the emitter base voltage is kept at 5V the current rating of this device is -2.5A a transition frequency of 110MHz
FMMT717TA Applications
There are a lot of Diodes Incorporated FMMT717TA applications of single BJT transistors.