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FMMT717TA

FMMT717TA

FMMT717TA

Diodes Incorporated

FMMT717TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT717TA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -12V
Max Power Dissipation625mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-2.5A
Frequency 110MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT717
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation625mW
Transistor Application SWITCHING
Gain Bandwidth Product110MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 220mV @ 50mA, 2.5A
Collector Emitter Breakdown Voltage12V
Transition Frequency 110MHz
Collector Emitter Saturation Voltage-180mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 12V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -2.5A
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:14706 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.46000$0.46
500$0.4554$227.7
1000$0.4508$450.8
1500$0.4462$669.3
2000$0.4416$883.2
2500$0.437$1092.5

FMMT717TA Product Details

FMMT717TA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 100mA 2V.The collector emitter saturation voltage is -180mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In order to achieve high efficiency, the continuous collector voltage should be kept at -2.5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -2.5A.Single BJT transistor contains a transSingle BJT transistorion frequency of 110MHz.Single BJT transistor can be broken down at a voltage of 12V volts.In extreme cases, the collector current can be as low as 2.5A volts.

FMMT717TA Features


the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 220mV @ 50mA, 2.5A
the emitter base voltage is kept at 5V
the current rating of this device is -2.5A
a transition frequency of 110MHz

FMMT717TA Applications


There are a lot of Diodes Incorporated FMMT717TA applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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